Associate III - VLSI MDST

Job Summary We are looking for a Memory Design Engineer with strong fundamentals in advanced-node memory design. The ideal candidate will have hands-on experience in SRAM design, modeling, verification, and circuit design, with exposure to cutting-edge foundry technologies. Experience with Samsung Foundry is mandatory. Key Responsibilities • Design and development of high-performance SRAM and memory circuits at advanced technology nodes. • Memory circuit design, modeling, and verification across multiple process corners. • Work on advanced foundry nodes (2nm / 3nm / 4nm); experience on lower nodes is highly preferred. • Perform detailed circuit simulations, analysis, and debugging to meet PPA targets. • Collaborate with foundry, layout, and verification teams to ensure robust memory design sign-off. • Contribute to design reviews and drive solutions based on strong design fundamentals. Required Skills & Qualifications • 3–8 years of hands-on experience in Memory Design. • Strong expertise in SRAM design, memory modeling, verification, and circuit design. • Solid understanding of advanced CMOS design concepts and deep-submicron effects. • Proven experience working with Samsung Foundry (mandatory). • Exposure to 2nm / 3nm / 4nm technology nodes; lower-node experience is strongly preferred. • Strong problem-solving skills with a solid grasp of analog and digital circuit fundamentals.